A Self-Organizing Map-Based Monitoring System for Insulated Gate Bipolar Transistors Operating in Fully Electric Vehicle

Marco Rigamonti, Piero Baraldi, Enrico Zio, Allegra Alessi, Daniel Astigarraga, and Ainhoa Galarza
Submission Type: 
Full Paper
AttachmentSizeTimestamp
phmc_15_041.pdf763 KBAugust 21, 2015 - 2:59pm

Insulated Gate Bipolar Transistors (IGBTs) are one of the most used power semiconductor devices for energy conversion applications, due to their high performance. In this work we have developed a monitoring system for IGBTs installed in Fully Electric Vehicles (FEVs), which are operating under very variable working conditions. The monitoring system is based on a Self-Organizing Map (SOM), trained considering data collected from healthy IGBTs. An indicator of the IGBT degradation is defined as the distance between the measured SOM input vector, i.e., the signal measured on the monitored IGBT, and its SOM Best Matching Unit (BMU) representative of an healthy IGBT in similar working conditions. Then, a method based on the definition of a utility function for the identification of the threshold value to be used for the classification of the IGBT degradation state is proposed. The approach is verified with respect to experimental data collected from an inverter connected to an electric motor, and is shown able to identify the IGBTs degradation state regardless of the actual operating condition.

Publication Year: 
2015
Publication Volume: 
6
Publication Control Number: 
041
Page Count: 
9
Submission Keywords: 
IGBT
fault diagnosis
Self-organizing maps
electric vehicle
Submission Topic Areas: 
PHM for electronics
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