Effects of Lightning Injection on Power-MOSFETs (Technical Brief)

Jose Celaya, Sankalita Saha, Phil Wysocki, Jay Ely, Truong Nguyen, George Szatkowski, Sandra Koppen, John Mielnik, Roger Vaughan, and Kai Goebel
Submission Type: 
Full Paper
Supporting Agencies (optional): 
NASA
AttachmentSizeTimestamp
phmc_09_20.pdf373.92 KBSeptember 18, 2009 - 4:30pm

Lightning induced damage is one of the major concerns in aircraft health monitoring. Such short-duration high voltages can cause significant damage to electronic devices. This paper presents a study on the effects of lightning injection on power metal-oxide semiconductor field effect transistors (MOSFETs). This approach consisted of pininjecting lightning waveforms into the gate, drain and/or source of MOSFET devices while they were in the OFF-state. Analysis of the characteristic curves of the devices showed that for certain injection modes the devices can accumulate considerable damage rendering them inoperable. Early results demonstrate that a power MOSFET, even in its off-state, can incur considerable damage due to lightning pin injection, leading to significant deviation in its behavior and performance, and to possibly early device failures.

Publication Control Number: 
020
Submission Keywords: 
applications: electronics
electronics PHM
field effect transistors (FET)
materials degradation
semiconductor device reliability
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