Towards Accelerated Aging Methodologies and Health Management of Power MOSFETs

Jose Celaya, Nishad Patil, Sankalita Saha, Phil Wysocki, and Kai Goebel
Submission Type: 
Technical Brief
Supporting Agencies (optional): 
NASA
AttachmentSizeTimestamp
phmc_09_66.pdf4.27 MBSeptember 18, 2009 - 7:07am

Understanding aging mechanisms of electronic components is of extreme importance in the aerospace domain where they are part of numerous critical subsystems including avionics. In particular, power MOSFETs are of special interest as they are involved in high voltage switching circuits such as drivers for electrical motors. With increased use of electronics in aircraft control, it becomes more important to understand the degradation of these components in aircraft specific environments. In this paper, we present an accelerated aging methodology for power MOSFETs that subject the devices to indirect thermal overstress during high voltage switching. During this accelerated aging process, two major modes of failure were observed – latch-up and die attach degradation. In this paper we present the details of our aging methodology along with details of experiments and analysis of the results.

Publication Control Number: 
066
Submission Keywords: 
accelerated testing
applications: electronics
electronic equipment
electronic prognostic methods
electronic systems
electronics PHM
field effect transistors (FET)
remaining useful life (RUL)
run-to-failure data
semiconductor device reliability
sensor fusion
Submitted by: 
  
 
 
 

follow us

PHM Society on Facebook Follow PHM Society on Twitter PHM Society on LinkedIn PHM Society RSS News Feed