Impact of Modulation Frequencies in the Lifetime of Power Semiconductor Modules for EV Applications

Quentin Gestes and Nicolas Degrenne
Submission Type: 
Full Paper
AttachmentSizeTimestamp
phmc_17_054.pdf387.88 KBAugust 18, 2017 - 1:32pm

Accurate lifetime estimation of power semiconductor modules is necessary in applications such as Electrical Vehicles (EV). This paper presents a new Modulation Frequency (MF) model to estimate the thermo-mechanical cycles caused by drive profiles and motor rotating speed. The paper compares lifetime estimations with conventional Low Frequency (LF) models and shows that when using conventional damage law established by power cycling experiments, the numerous low-amplitude cycles at the modulation frequency play a major role in the degradation of the power semiconductor modules. Finally this paper conclude that conventional LESIT law are not relevant in this case and dynamic model should be implemented to characterize the impact of those low-amplitude cycles who depends on semiconductor damage.

Publication Year: 
2017
Publication Volume: 
8
Publication Control Number: 
054
Page Count: 
5
Submission Keywords: 
Electrical Vehicles
Semiconductor reliability
Submission Topic Areas: 
Model-based methods for fault detection, diagnostics, and prognosis
Submitted by: 
  
 
 
 

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