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CREATED:20110908T231818Z
DESCRIPTION:9:00AM–9:30AM Prognostics of Power MOSFETs under Thermal Stre
ss Accelerated Aging using Data-Driven and Model-Based Methodologies\nJos
é Celaya\n(SGT Inc./NASA Ames Research Center\, USA) Verdun/ Lachine \n\n
DTEND:20110929T133000Z
DTSTAMP:20110908T231818Z
DTSTART:20110929T130000Z
LAST-MODIFIED:20110908T231818Z
LOCATION:Verdun/ Lachine
PRIORITY:5
SEQUENCE:0
SUMMARY;LANGUAGE=en-us:Paper Session 7B & Panel - Electronics PHM II - Pape
r 3
TRANSP:OPAQUE
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FONT SIZE=2 FACE="Arial">:00AM–9:3<
/FONT>0AM \; \; Prognostics of Power MOSFETs under Thermal Stress Acceler
ated Aging using Data-Driven and Model-Based Methodologies
\nJosé Celaya
\n<
/SPAN>(SGT Inc./NASA Ames Research Center\, USA) \; \; \; \; \; \; Verdun/ Lachine
\n
\n\n\n
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