The ability to utilize prognostic system health information in operational decision making, especially when fused with information about future operational, environmental, and mission requirements, is becoming desirable for both manned and unmanned aerospace vehicles. A vehicle capable of evaluating its own health state and making (or assisting the crew in making) decisions with respect to its system health evolution over time will be able to go further and accomplish more mission objectives than a vehicle fully dependent on human control.

An approach for predicting remaining useful life of power MOSFETs (metal oxide field effect transistor) devices has been developed. Power MOSFETs are semiconductor switching devices that are instrumental in electronics equipment such as those used in operation and control of modern aircraft and spacecraft. The MOSFETs examined here were aged under thermal overstress in a controlled experiment and continuous performance degradation data were collected from the accelerated aging experiment. Die-attach degradation was determined to be the primary failure mode.

A remaining useful life prediction methodology for electrolytic capacitors is presented. This methodology is based on the Kalman filter framework and an empirical degradation model. Electrolytic capacitors are used in several applications ranging from power supplies on critical avionics equipment to power drivers for electro-mechanical actuators. These devices are known for their comparatively low reliability and given their criticality in electronics subsystems they are a good candidate for component level prognostics and health management.

The success of model-based approaches to systems health management depends largely on the quality of the underlying models. In model-based prognostics, it is especially the quality of the damage progression models, i.e., the models describing how damage evolves as the system operates, that determines the accuracy and precision of remaining useful life predictions. Several common forms of these models are generally assumed in the literature, but are often not supported by physical evidence or physics-based analysis.

This paper presents research results dealing with power MOSFETs (metal oxide semiconductor field effect transistor) within the prognostics and health management of electronics. Experimental results are presented for the identification of the on-resistance as a precursor to failure of devices with die-attach degradation as a failure mechanism. Devices are aged under power cycling in order to trigger die-attach damage.

Power electronics are widely used in critical roles in modern day aircrafts and hence their health management is of great interest. An important part of prognostics and health management of these devices is understanding the effect of high-stress events such as lightning and how they affect their aging. In this paper we present our study and analysis of lightning injection experiments with power MOSFETs in their ON state. We show the different kind of damages that can be caused by such events and analyze their effects on device performance parameters.

Prognostic performance evaluation has gained significant attention in the past few years.Currently, prognostics concepts lack standard definitions and suffer from ambiguous and inconsistent interpretations. This lack of standards is in part due to the varied end-user requirements for different applications, time scales, available information, domain dynamics, etc. to name a few. The research community has used a variety of metrics largely based on convenience and their respective requirements.

This article reports on preliminary results of a study conducted to examine how temporary electrical overstress seed fault conditions in discrete power electronic components that cannot be detected with reliability tests but impact longevity of the device. These defects do not result in formal parametric failures per datasheet specifications, but result in substantial change in the electrical characteristics when compared with pristine device parameters. Tests were carried out on commercially available 600V IGBT devices using transmission line pulse (TLP) and system level ESD stress.

Understanding aging mechanisms of electronic components is of extreme importance in the aerospace domain where they are part of numerous critical subsystems including avionics. In particular, power MOSFETs are of special interest as they are involved in high voltage switching circuits such as drivers for electrical motors. With increased use of electronics in aircraft control, it becomes more important to understand the degradation of these components in aircraft specific environments.

Lightning induced damage is one of the major concerns in aircraft health monitoring. Such short-duration high voltages can cause significant damage to electronic devices. This paper presents a study on the effects of lightning injection on power metal-oxide semiconductor field effect transistors (MOSFETs). This approach consisted of pininjecting lightning waveforms into the gate, drain and/or source of MOSFET devices while they were in the OFF-state.